Ultrahigh on/off-current ratio γ-graphyne-1 nanotube-based sub-10-nm TFET modeling and simulation

The use of γ-graphyne-1 nanotubes (GyNTs) in tunneling field effect transistors (TFETs) suppresses ambipolarity and enhances the subthreshold swing (\(\mathrm{SS}\)) TFETs, due to large energy band gap high electron effective mass GyNTs. In this research, analysis structural, electronic thermoelectric properties family under deformation potential (DP) approach reveals that electron–phonon mean free path (MFP) an armchair GyNT (3AGyNT) zigzag (2ZGyNT) are \(24\) \(279\) nm, respectively. Therefore, ballistic transport sub-10-nm 3AGyNT-TFETs 2ZGyNT-TFETs different channel lengths is investigated utilizing non-equilibrium Green’s function (NEGF) formalism DFTB platform. An ultrahigh \(\mathrm{on}/\mathrm{off}\)-current ratio (\(\mathrm{OOCR}\)) value 1.6 × 1010 at \(V_{DD} = 0\). \(2 \;{\text{V}}\) very low point \({\text{SS}}\) \(5 \;{\text{mV}}/{\text{dec}}\) were demonstrated by 3AGyNT-TFET with a length 9.6 nm. show higher on-state current lower \({\text{OOCR}}\) than those 3AGyNT-TFETs. A linear relationship was found between logarithmic off-state consistent WKB approximation. obtained results along ultralow power consumption proposed GyNT-TFETs make them candidates replace digital silicon MOSFETs next-generation nanoelectronic devices.